Part Number Hot Search : 
226X0 MB3793 PS256 EN0EM H0101001 XC167CI OPF517 SCBAR10
Product Description
Full Text Search

K6F4016S4DFAMILY - 256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet

K6F4016S4DFAMILY_5577490.PDF Datasheet


 Full text search : 256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet


 Related Part Number
PART Description Maker
K6F4016S6DFAMILY 256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
Samsung Electronic
HY62LF16404C Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
Hynix Semiconductor
CMP0417AA0-F70I CMP0417AA0-I 256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
EM646FV16FU 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic Solutions
EM644FV16FU 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic Solutions Inc
KM68FS2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低电压CMOS 静RAM)
SAMSUNG SEMICONDUCTOR CO. LTD.
AS6C4016 256K X 16 BIT SUPER LOW POWER CMOS SRAM
Fully static operation
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
Alliance Semiconductor ...
A62S8316 A62S8316G-70S A62S8316G-70SI A62S8316V-70    256K X 16 BIT LOW VOLTAGE CMOS SRAM
70ns; 50mA 256K x 16bit low voltage CMOS SRAM
AMIC Technology Corporation
AMICC[AMIC Technology]
HY62SF16404E High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
HYNIX
HY62SF16404C High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
HYNIX
LP62S16256FU-55LLT 55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
AMIC Technology
KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
Samsung Electronic
 
 Related keyword From Full Text Search System
K6F4016S4DFAMILY voltage vgs K6F4016S4DFAMILY datasheet online K6F4016S4DFAMILY filetype:pdf K6F4016S4DFAMILY battery mcu K6F4016S4DFAMILY standard
K6F4016S4DFAMILY inductors K6F4016S4DFAMILY Corporate K6F4016S4DFAMILY voltage vgs K6F4016S4DFAMILY Test K6F4016S4DFAMILY MARKING
 

 

Price & Availability of K6F4016S4DFAMILY

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.49113988876343